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Si860x
500
400
350
300
AVDD , BVDD = 3.6 V
220
200
AVDD , BVDD = 5.5 V
100
0
0
50
100
150
200
Temperature (oC)
Figure 6. WB SOIC-16 Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Table 12. Absolute Maximum Ratings 1
Parameter
Symbol
Min
Typ
Max
Unit
Storage Temperature
2
T STG
–65
—
150
oC
Output Current Drive (non-I C channels)
Side B output current drive (I C channels)
Ambient Temperature Under Bias
Junction Temperature
Supply Voltage
Input Voltage
Output Voltage
2
Side A output current drive (I 2 C channels)
2
Lead Solder Temperature (10 s)
Maximum Isolation (Input to Output) (1 sec)
NB SOIC-8, SOIC-16
Maximum Isolation (Input to Output) (1 sec)
WB SOIC-16
T A
T J
V DD
V I
V O
I O
I O
I O
–40
—
–0.5
–0.5
–0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
125
150
7.0
V DD + 0.5
V DD + 0.5
±10
±15
±75
260
4500
6500
oC
°C
V
V
V
mA
mA
mA
oC
V RMS
V RMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 °C.
14
Rev. 1.3
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